Approaching microwave photon sensitivity with Al Josephson junctions

• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Leonid S. Revin,
• Dmitry A. Ladeynov,
• Anton A. Yablokov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 582–589, doi:10.3762/bjnano.13.50

• energies of three and even five photons are smaller than the barrier height. However, switching may still occur due to either resonant tunneling or resonant activation effects [22][39][40][49][51]. With the critical current of 8.586 μA, the barrier height for bias currents in the range of 7.5–8.08 μA

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• Majid Sanaeepur Department of Electrical Engineering, Faculty of Engineering, Arak University, Arak, 3815688349, Iran Institute of Nanosciences and Nanotechnology, Arak University, Arak, Iran 10.3762/bjnano.11.56 Abstract A nanometer-scaled resonant tunneling diode based on lateral

• substitutional defects (including BC, NC, CB, and CN) at the interface of graphene and boron nitride nanoribbons on the negative differential resistance behavior of the proposed resonant tunneling diode is investigated. Transport simulations are carried out in the framework of tight-binding Hamiltonians and non

• heterojunction; armchair boron nitride nanoribbon (ABNNR); armchair graphene nanoribbon (AGNR); negative differential resistance (NDR); nonequilibrium Green’s function (NEGF); resonant tunneling diode (RTD); substitutional defects; Introduction 2D materials have gained tremendous research interest due to the

Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

• Levente Máthé and
• Ioan Grosu

Beilstein J. Nanotechnol. 2020, 11, 225–239, doi:10.3762/bjnano.11.17

• electrons and to left for spin-down electrons. The broadened peak corresponds to resonant tunneling of electrons with spin σ at the spin-dependent renormalized QD energy level We observe that, in all cases, the DOS totally disappears at ω = 0. In addition, for μα = 0 the Kondo peak does not show up in the

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• -GaAs layer thickness, on the one hand, limits the fluctuation of QD heights in vertically stacked arrays and stabilizes them and, on the other hand, improves the charge transfer due to the resonant tunneling between the vertical InAs QD layers. Photoluminescence properties of InAs/GaAsBi

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• 0.5 V. In contrast, sector 2 exhibit different changes in the current with increasing doping level. For a concentration of 1016 cm−3 a change of the transfer mechanism from thermionic to resonant tunneling can be seen at a bias voltage higher than 1.5 V because of field-assisted tunneling [42

Thermo-voltage measurements of atomic contacts at low temperature

• Ayelet Ofarim,
• Bastian Kopp,
• Thomas Möller,
• León Martin,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 767–775, doi:10.3762/bjnano.7.68

• from reduced lifetime, is largely facilitated. Furthermore, temperature-dependent effects of the transmission function that are expected in resonant tunneling situations can be revealed. Thus the ability to measure at variable temperature represents a considerable improvement compared to fixed

Electrical characterization of single molecule and Langmuir–Blodgett monomolecular films of a pyridine-terminated oligo(phenylene-ethynylene) derivative

• Henrry M. Osorio,
• Santiago Martín,
• María Carmen López,
• Santiago Marqués-González,
• Simon J. Higgins,
• Richard J. Nichols,
• Paul J. Low and
• Pilar Cea

Beilstein J. Nanotechnol. 2015, 6, 1145–1157, doi:10.3762/bjnano.6.116

• ) method is in good agreement with the I–V curve obtained for the LB film, and both curves fit well with the Simmons model. Together, these results not only indicate that the mechanism of transport through these metal–molecule–metal junctions is non-resonant tunneling, but that lateral interactions between

• molecular environment is different in both cases. Whilst the molecules are closely packed within the LB film, no nearest molecules exist for the single molecule studies. A widely applied tunneling model for non-resonant tunneling charge transport was developed by Simmons [109]. In this model, the current I

Graphene quantum interference photodetector

• Mahbub Alam and
• Paul L. Voss

Beilstein J. Nanotechnol. 2015, 6, 726–735, doi:10.3762/bjnano.6.74

• nanoribbon; phase coherence; photodetector; quantum interference; resonant tunneling; Introduction Graphene, a single layer of carbon atoms arranged in a honeycomb lattice structure, has attracted much attention from researchers because of its exceptional electronic, mechanical and optical properties such

• device structure that has attracted attention is the resonant tunneling diode, whose operation is based on quantum interference [10]. In graphene nanoribbons, a Mach–Zehnder interferometer (MZI) structure can be devised which gives the same transmittance pattern as that of a resonant tunneling diode for

• behaves like a resonant tunneling structure, meaning that at some energy, electrons pass through the structure as if there were no barriers. At this energy, the transmittance is one (T = 1) and constructive interference occurs. The energy at which this occurs is called the resonant energy level. There can

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• , Sezione di Bari and Dipartimento di Fisica, Università degli Studi di Bari, Via Amendola 173, 70126 Bari, Italy 10.3762/bjnano.6.71 Abstract A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si) heterojunction

• –voltage curve presents a NDR and resembles that of a resonant tunneling junction. Figure 6b–d shows the photocurrent measured at three incident light powers (0.1, 0.5 and 1.0 mW) for three wavelengths (378, 650 and 980 nm). The drain voltage at maximum photocurrent varies weakly as a function of the

• behavior. The similarity in the current shape with that of a typical resonant tunneling junction suggests that a kind of electronic resonance process induced by the photogenerated charges may be present. Recently, Castrucci et al. [18] stressed that multiwall CNTs can contribute to the photocurrent because

Spectroscopic mapping and selective electronic tuning of molecular orbitals in phosphorescent organometallic complexes – a new strategy for OLED materials

• Pascal R. Ewen,
• Jan Sanning,
• Tobias Koch,
• Nikos L. Doltsinis,
• Cristian A. Strassert and
• Daniel Wegner

Beilstein J. Nanotechnol. 2014, 5, 2248–2258, doi:10.3762/bjnano.5.234

• measuring dI/dV maps within the HOMO–LUMO gap where no resonant tunneling into MO occurs [41]. Therefore, the HOMO–1 is observed twice, below and above EF. This situation is again schematically depicted in Figure 3b, where two red-colored broadened peaks represent the observed MOs at the Pt site. The fact

Transmission eigenvalue distributions in highly conductive molecular junctions

• Justin P. Bergfield,
• Joshua D. Barr and
• Charles A. Stafford

Beilstein J. Nanotechnol. 2012, 3, 40–51, doi:10.3762/bjnano.3.5

• therefore contribute at most two transmission channels. The third channel thus arises from further off-resonant tunneling. In fact, we would argue that the very observation of a third channel in some Pt–benzene–Pt junctions [4] is a consequence of the very large lead–molecule coupling (~2 eV per atomic

Towards quantitative accuracy in first-principles transport calculations: The GW method applied to alkane/gold junctions

• Mikkel Strange and
• Kristian S. Thygesen

Beilstein J. Nanotechnol. 2011, 2, 746–754, doi:10.3762/bjnano.2.82

• ][13][14] (an exception to this trend occurs for small molecules, such as H2 [15][16][17] and CO [18][19], which chemisorb strongly to the electrodes, resulting in resonant transport through broad, partially filled resonances). The inability of DFT to describe off-resonant tunneling in the simplest